Infrared detector, infrared detecting apparatus, and method of manufacuring infrared detector

摘要

Provided is an infrared detector comprising: a reflection portion (1) which transmits far- and middle-infrared rays and which reflects near-infrared and visible rays; a photo-current generating portion (2) having a quantum well structure in which electrons are excited by the far- and middle-infrared rays having passed through the reflection portion (1) so as to generate photo-current; a light emitting portion (3) having a quantum well structure into which electrons of the photo-current generated by the photo-current generating portion (2) are injected and in which the electrons thus injected thereinto are recombined with holes so as to emit near-infrared and visible rays; and a photo-detecting portion (4) which detects the near-infrared and visible rays emitted from the light emitting portion (3) and which detects the near-infrared and visible rays emitted from the light emitting portion (3) and reflected by the reflection portion (1). The reflection portion (1), the photo-current generating portion (2), and the light emitting portion (3) are made of group III-V compound semiconductors that are layered on top of a semiconductor substrate (10).