| 摘要 |
<p>The present invention provides a structure (28) combining an IC integrated substrate (8) and a carrier (10), which comprises a carrier and an IC integrated substrate formed on the carrier. The IC integrated substrate has a first dielectric layer (14) attached to the carrier. The materials of the carrier and the first dielectric layer are selected to prevent the IC integrated substrate from peeling off the carrier during processing and to allow the IC integrated substrate to naturally separate from the carrier after being cut, through the adhesion between the carrier and the first dielectric layer. The present invention also provides a method of manufacturing the above structure and a method of manufacturing electrical devices (6) using the above structure. In one embodiment the IC integrated substrate comprises dielectric layers (14,16,18,20) with the metal layers (22,24,26) therebetween. In another embodiment the IC integrated substrate includes at least one semiconductor device (35).
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