发明名称
摘要 <p>A production method for a semiconductor wafer is provided in which semi-fixed abrasive grain grinding with free abrasive grains reduces minute surface undulations generated by wire saw slicing or double disc grinding as well as simplifying conventional semiconductor wafer fabrication process steps. A production method for a semiconductor wafer characterized by conducting a slicing process, then a beveling process, an etching process, and a one side or double side polishing process, wherein a semi-fixed abrasive grinding process using a porous polishing pad and free abrasive grains is conducted after the slicing process.</p>
申请公布号 JP4345357(B2) 申请公布日期 2009.10.14
申请号 JP20030149782 申请日期 2003.05.27
申请人 发明人
分类号 H01L21/304;B24B7/17;B24B9/06;B24B37/00;B24D13/14;H01L21/306 主分类号 H01L21/304
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