发明名称 |
Thin film transistor and method of fabricating the same |
摘要 |
A thin film transistor and method of fabricating the same are provided. In the thin film transistor, a seed or a grain boundary exists in a semiconductor layer pattern but not in a junction region. The method includes forming a semiconductor layer pattern. Forming the semiconductor layer pattern includes: forming and patterning a first capping layer on an amorphous silicon layer; forming a second capping layer on the first capping layer pattern; forming a metal catalyst layer on the second capping layer; diffusing the metal catalyst; and crystallizing the amorphous silicon layer to form a polysilicon layer. Therefore, it is possible to prevent that a trap is generated in the junction region, thereby obtaining improved and uniform characteristics of the device.
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申请公布号 |
US7601565(B2) |
申请公布日期 |
2009.10.13 |
申请号 |
US20060279798 |
申请日期 |
2006.04.14 |
申请人 |
SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
SEO JIN-WOOK;LEE KI-YONG;YANG TAE-HOON;PARK BYOUNG-KEON |
分类号 |
H01L21/84;H01L21/20;H01L21/336;H01L27/01;H01L27/108;H01L29/04;H01L29/10;H01L29/786 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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