| 摘要 |
A non-volatile storage element includes a first data terminal and a second data terminal, a first MOS transistor and a second MOS transistor, the first MOS transistor and the second MOS transistor having a first conductivity type, a third MOS transistor and a four MOS transistor, the third MOS transistor and the fourth MOS transistor having floating gates and having a second conductivity type, and a fifth MOS transistor and a sixth MOS transistor having the second conductivity type.
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