发明名称 Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
摘要 A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a diode structure disposed on the resistor structure, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory devices as described above.
申请公布号 US7602042(B2) 申请公布日期 2009.10.13
申请号 US20050270459 申请日期 2005.11.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 AHN SEUNG-EON;YOO IN-KYEONG;JOUNG YOUNG-SOO;CHA YOUNG-KWAN;LEE MYOUNG-JAE;SEO DAVID;SEO SUN-AE
分类号 H01L23/62 主分类号 H01L23/62
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