发明名称 |
Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same |
摘要 |
A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a diode structure disposed on the resistor structure, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory devices as described above. |
申请公布号 |
US7602042(B2) |
申请公布日期 |
2009.10.13 |
申请号 |
US20050270459 |
申请日期 |
2005.11.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN SEUNG-EON;YOO IN-KYEONG;JOUNG YOUNG-SOO;CHA YOUNG-KWAN;LEE MYOUNG-JAE;SEO DAVID;SEO SUN-AE |
分类号 |
H01L23/62 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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