发明名称 High frequency control of a semiconductor switch
摘要 Resonant gate driver circuits provide for efficient switching of, for example, a MOSFET. However, often an operation of the resonant gate driver circuit does not allow for an application where high switching frequencies are required. According to the present invention, a pre-charging of the inductor of the resonant gate driver circuit is performed. This allows for a highly efficient and fast operation of the MOSFETs.
申请公布号 US7602229(B2) 申请公布日期 2009.10.13
申请号 US20060570743 申请日期 2006.03.06
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 TOLLE TOBIAS GEORG;DUERBAUM THOMAS;SAUERLAENDER GEORG;LOPEZ TONI
分类号 H03K17/72;H03K17/00;H03K17/0412;H03K17/0416 主分类号 H03K17/72
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