发明名称 |
High frequency control of a semiconductor switch |
摘要 |
Resonant gate driver circuits provide for efficient switching of, for example, a MOSFET. However, often an operation of the resonant gate driver circuit does not allow for an application where high switching frequencies are required. According to the present invention, a pre-charging of the inductor of the resonant gate driver circuit is performed. This allows for a highly efficient and fast operation of the MOSFETs.
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申请公布号 |
US7602229(B2) |
申请公布日期 |
2009.10.13 |
申请号 |
US20060570743 |
申请日期 |
2006.03.06 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
TOLLE TOBIAS GEORG;DUERBAUM THOMAS;SAUERLAENDER GEORG;LOPEZ TONI |
分类号 |
H03K17/72;H03K17/00;H03K17/0412;H03K17/0416 |
主分类号 |
H03K17/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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