发明名称 |
Method of manufacturing EUVL alternating phase-shift mask |
摘要 |
A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.
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申请公布号 |
US7601467(B2) |
申请公布日期 |
2009.10.13 |
申请号 |
US20060367438 |
申请日期 |
2006.03.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HUH SUNG-MIN;KIM HEE-BOM;CHOI SEONG-WOON;KIM DONG-WAN;JEON CHAN-UK |
分类号 |
G03F1/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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地址 |
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