发明名称 Method for producing semi-conditioning material wafers by moulding and directional crystallization
摘要 Wafers of semi-conducting material are formed by moulding and directional crystallization from a liquid mass of this material. A seed, situated at the bottom of the crucible, presents an orientation along non-dense crystallographic planes. The mould is filled with the molten semi-conducting material by means of a piston or by creation of a pressure difference in the device. The mould is preferably coated with a non-wettable anti-adhesive deposit.
申请公布号 US7601618(B2) 申请公布日期 2009.10.13
申请号 US20080213751 申请日期 2008.06.24
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 DREVET BEATRICE;SARTI DOMINIQUE;CAMEL DENIS;GARANDET JEAN-PAUL
分类号 H01L21/20;H01L21/36 主分类号 H01L21/20
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