发明名称 |
Method for producing semi-conditioning material wafers by moulding and directional crystallization |
摘要 |
Wafers of semi-conducting material are formed by moulding and directional crystallization from a liquid mass of this material. A seed, situated at the bottom of the crucible, presents an orientation along non-dense crystallographic planes. The mould is filled with the molten semi-conducting material by means of a piston or by creation of a pressure difference in the device. The mould is preferably coated with a non-wettable anti-adhesive deposit.
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申请公布号 |
US7601618(B2) |
申请公布日期 |
2009.10.13 |
申请号 |
US20080213751 |
申请日期 |
2008.06.24 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
DREVET BEATRICE;SARTI DOMINIQUE;CAMEL DENIS;GARANDET JEAN-PAUL |
分类号 |
H01L21/20;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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