发明名称 |
Partially depleted SOI field effect transistor having a metallized source side halo region |
摘要 |
Source and drain extension regions and source side halo region and drain side halo region are formed in a top semiconductor layer aligned with a gate stack on an SOI substrate. A deep source region and a deep drain region are formed asymmetrically in the top semiconductor layer by an angled ion implantation. The deep source region is offset away from one of the outer edges of the at least spacer to expose the source extension region on the surface of the semiconductor substrate. A source metal semiconductor alloy is formed by reacting a metal layer with portions of the deep source region, the source extension region, and the source side halo region. The source metal semiconductor alloy abuts the remaining portion of the source side halo region, providing a body contact tied to the deep source region to the partially depleted SOI MOSFET.
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申请公布号 |
US7601569(B2) |
申请公布日期 |
2009.10.13 |
申请号 |
US20070761568 |
申请日期 |
2007.06.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CAI JIN;HAENSCH WILFRIED;MAJUMDAR AMLAN |
分类号 |
H01L21/335;H01L21/00;H01L21/338;H01L21/8234 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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