SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING RESISTANCE VARIABLE MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device including a resistance variable memory device and a memory system are provided to reduce a manufacturing cost by controlling NOR area and NAND area through one memory controller. CONSTITUTION: A semiconductor memory device includes a memory cell array(310) and an input circuit, and a control logic(370). The memory cell array includes a plurality of resistance variable memory cells. The plurality of memory cells are divided into a first area(311) and a second area(312). The input and output circuit accesses the memory cell array. The control logic controls the input and output circuit to access the first or second area in response to the outer command. The input and output circuit performs the memory cell unit access in the first area. The input and output circuit performs the page unit access in the second area.