发明名称 |
Plasma etching chamber and method for manufacturing photomask using the same |
摘要 |
A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate. |
申请公布号 |
US7601469(B2) |
申请公布日期 |
2009.10.13 |
申请号 |
US20070758258 |
申请日期 |
2007.06.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JEONG-YUN;KIM JIN-MIN;JEONG HAE-YOUNG;NO YOUNG-HWA;YOON SANG-JOON;CHO SUNG-YONG |
分类号 |
G03F1/00;H05H1/46;C23F4/00;G03F1/08;G03F1/54;G03F7/26;H01J37/32;H01L21/3065 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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