| 摘要 |
A manufacturing method for a super-junction semiconductor device is disclosed. The method includes a first step of depositing, on a low-resistivity semiconductor substrate of one conductivity type, at least an epitaxial layer of the one conductivity type which is to become a drift layer; a second step of forming a base region(s) of the other conductivity type and source regions of the one conductivity type to be used for formation of MOS gate structures; a third step of forming, by anisotropic vapor-phase etching using an insulating film mask, trenches that penetrate through the base region(s) and reach the low-resistivity semiconductor substrate or its vicinity; and a fourth step of burying epitaxial layers of the other conductivity type in the respective trenches, the first to fourth steps being executed in this order.
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