发明名称 Non-volatile memory devices capable of reading data during multi-sector erase operation, and data read methods thereof
摘要 The data read method for a non-volatile memory device includes a multi-sector erase operation and a Read While Write (RWW) operation. In the multi-sector erase operation, a plurality of sectors, which are to be erased, are sequentially erased. In the RWW operation, if a read command instructing reading of a sector that is to be read is received while the multi-sector erase operation is being performed, data of the sector that is to be read is read. In the RWW operation, data of a sector that is to be read belonging to a bank including an erased sector, from which data is already erased, is read. Related memory devices are also disclosed.
申请公布号 US7602643(B2) 申请公布日期 2009.10.13
申请号 US20060608976 申请日期 2006.12.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO JI-HO
分类号 G11C16/04 主分类号 G11C16/04
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