| 摘要 |
PURPOSE: A poly silicon deposition apparatus is provided to heighten the deposit efficiency that the source gas is evaporated in the silicon core load by raising the surface temperature of the silicon core rod. CONSTITUTION: A poly silicon deposition apparatus(100) contains an electrode portion(121), a silicon core rod part(122), a silicon core rod heating portion(123), and a gas blowing nozzle(124) of the plural number. The electrode portion installs in the floor of the reactor(110). The electrode portion includes the first electrode(121a) and the second electrode(121b) which are installed to be located as the prescribed distance. The silicon core rod part contains the first silicon core rod(122a), the second silicon core rod(122b), and the third silicon core rod(122c). The silicon core rod heating portion includes the first heating element(123a), and the second heating element(123b). The plural gas blowing nozzles are formed on the surface of the first and the second heating elements.
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