发明名称 |
Method for rapid, controllable growth and thickness, of epitaxial silicon films |
摘要 |
A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.
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申请公布号 |
US7601215(B1) |
申请公布日期 |
2009.10.13 |
申请号 |
US20060560886 |
申请日期 |
2006.11.17 |
申请人 |
ALLIANCE FOR SUSTAINABLE ENERGY, LLC |
发明人 |
WANG QI;STRADINS PAUL;TEPLIN CHARLES;BRANZ HOWARD M. |
分类号 |
C30B15/20 |
主分类号 |
C30B15/20 |
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