发明名称 |
High current electron beam inspection |
摘要 |
A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.
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申请公布号 |
US7602197(B2) |
申请公布日期 |
2009.10.13 |
申请号 |
US20040560205 |
申请日期 |
2004.06.07 |
申请人 |
APPLIED MATERIALS, ISRAEL, LTD. |
发明人 |
KADYSHEVITCH ALEXANDER;SHUR DMITRY;TALBOT CHRISTOPHER |
分类号 |
G01R31/00;G01R31/28;G01R31/307 |
主分类号 |
G01R31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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