| 发明名称 |
One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| 摘要 |
A single polytype single crystal silicon carbide wafer is disclosed having a diameter greater than three inches and less than five inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm-2, and a combined concentration of shallow level dopants less than 5E16 cm-3.
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| 申请公布号 |
US7601441(B2) |
申请公布日期 |
2009.10.13 |
| 申请号 |
US20040876963 |
申请日期 |
2004.06.25 |
| 申请人 |
CREE, INC. |
发明人 |
JENNY JASON RONALD;MALTA DAVID PHILLIP;HOBGOOD HUDSON MCDONALD;MUELLER STEPHAN GEORG;BRADY MARK;LEONARD ROBERT TYLER;POWELL ADRIAN;TSVETKOV VALERL F. |
| 分类号 |
B32B19/00;H01L21/205;C30B23/00;C30B29/36;C30B33/00;H01L21/324;H01L31/0312 |
主分类号 |
B32B19/00 |
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