METHOD FOR FORMING GATE IN HIGHLY INTEGRATED SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a gate of a high integrated semiconductor device is provided to lower a height of a gate pattern by performing a silicide process after increasing a height of a whole gate. CONSTITUTION: A gate pattern(110) is formed on a semiconductor substrate(100). A protecting film(130) is formed, and covers the gate pattern and the semiconductor substrate. An interlayer insulation film(140) is formed in order to fill a gap between the gate patterns. A top surface of the gate pattern is exposed. A silicon film is formed on a top part of the exposed gate pattern. A metal film for silicide is formed on a result in which the silicon film is formed. The silicide is formed by heating the semiconductor substrate. A non-reacted metal film is removed.