APPARATUS FOR PLASMA PROCESSING AND METHOD FOR PLASMA PROCESSING

摘要

PURPOSE: A plasma processing device and a plasma processing method are provided to reduce the cost and time for production by performing a substrate rear etching process and a bevel etching process continuously in one device. CONSTITUTION: A plasma processing device includes a chamber(100), a top electrode(200), a bottom electrode(500), a substrate support, and a moving unit(700). The top electrode is prepared in an upper side of the chamber. The bottom electrode is arranged in a lower side of the chamber to face the top electrode. The bottom electrode supports the substrate in a substrate bevel etching process. The substrate support is prepared between the top electrode and the bottom electrode and supports the substrate in the substrate rear etching process. The moving unit separates the substrate from the substrate support by moving the substrate support in the substrate bevel etching process.