APPARATUS FOR PLASMA PROCESSING AND METHOD FOR PLASMA PROCESSING

摘要

PURPOSE: A plasma processor and a plasma processing method are provided to reduce the time and cost for production by continuously performing a substrate rear etching process and a substrate bevel etching process in one device. CONSTITUTION: A top electrode(200) is prepared in an upper side of a chamber(100) and sprays the inactive gas. A bottom electrode(500) is arranged in a lower side of the chamber to face the top electrode. The bottom electrode supports the substrate bevel to be exposed in the substrate bevel etching process and sprays the active gas. A substrate support(300) is prepared between the top electrode and the bottom electrode and supports the central area of the substrate rear in the substrate rear etching process. A moving unit(700) separates the substrate from the substrate support by moving the substrate support in the substrate rear etching process. A first active gas nozzle(530) and a second active gas nozzle(560) are formed in the upper side and the lateral side of the bottom electrode.