WAFER BONDING METHOD AND BONDED WAFER STRUCTURE USING THE SAME

摘要

PURPOSE: A wafer bonding method is provided to improve throughput by performing a manufacturing process of many insulation wafers at a time. CONSTITUTION: A conductive wafer and a plurality of insulation wafers are provided(S10). A size of the conductive wafer is larger than a size of the insulation wafer. At least one of the conductive wafer and the insulation wafer is pre-treated(S20). The pre-treatment is a plasma treatment or a wet treatment. The conductive wafer and the insulation wafers are directly bonded(S30). A dangling bond is formed on a bonding surface of the wafer in which the pre-treatment is performed.