发明名称 SPUTTER METHOD AND SPUTTER DEVICE
摘要 It is possible to provide a sputter method and a sputter device which can perform low-temperature and low-damage film formation with a simple configuration and with a high productivity. According to the sputter method, in a vacuum vessel, an initial layer of film is formed on an object on which a film is to be formed and then a second layer is formed on the initial layer. In the vacuum vessel, a pair of targets are arranged with their surfaces apart from each other and opposing to each other and inclined toward the object which is arranged at the side of the targets and on which the film is to be formed. A magnetic space is generated at the side of the opposing surfaces of the pair of targets for sputtering so that the sputter particles form an initial layer on the object on which the film is to be formed and further a second layer on the object on which the film is to be formed, at a higher speed than the formation of the initial layer.
申请公布号 KR20090106629(A) 申请公布日期 2009.10.09
申请号 KR20097017633 申请日期 2008.01.25
申请人 发明人
分类号 C23C14/34 主分类号 C23C14/34
代理机构 代理人
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