| 摘要 |
Disclosed is an apparatus for forming a compound thin film on the surface of a substrate, which is held in a sputtering film formation chamber, by reactive sputtering. The sputtering film formation chamber is provided with a first film property-adjusting gas introducing means for introducing a film property-adjusting gas, which is used for adjusting the film properties of a compound thin film to be formed on the front surface of the substrate, onto the back surface of the substrate.
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