| 摘要 |
Provided is a bonding apparatus (10) for bonding the electrode of a semiconductor die (12) and the electrode of a circuit substrate (19) by means of metallic nano paste. The bonding apparatus (10) comprises a bump forming mechanism (20) for forming bumps by injecting fine droplets of the metallic nano paste onto the electrodes, a primary bonding mechanism (50) for bonding the individual electrodes primarily in an inconductive state by pushing the bumps of the semiconductor die (12) onto the bumps of the circuit substrate (19), and a secondary bonding mechanism (80) including a pressurizer for pushing the primarily bonded bumps in the bonded direction and adapted for heating the bumps to a temperature higher than both the binder removing temperature of the metallic nano paste and the dispersing agent removing temperature of the metallic nano paste thereby to remove the binder and the dispersing agent and for bonding the individual electrodes secondarily to become conductive by pushing and sintering the metallic nano particles of the individual bumps. As a result, it is possible to reduce the bonding loads and to bond the individual electrodes efficiently by the convenient method. |
