| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an HBT capable of simultaneously improving both on-state resistance and a breakdown voltage in the state that a collector current is flowing. Ž<P>SOLUTION: The hetero-junction bipolar transistor includes an n-type GaAs sub collector layer 101, an InGaP collector layer 102 formed on the GaAs sub collector layer 101, an n-type GaAs spacer layer 103 formed on the InGaP collector layer 102, an n-type GaAs second collector layer 104 and a GaAs first collector layer 105 formed on the GaAs spacer layer 103, a p-type GaAs base layer 110 formed on the GaAs first collector layer 105, and an n-type InGaP emitter layer 111 formed on the GaAs base layer 110. The GaAs sub collector layer 101 has a carrier density higher than that of the GaAs second collector layer 104 and the GaAs first collector layer 105, and the GaAs second collector layer 104 has the carrier density higher than that of the GaAs first collector layer 105. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
