| 摘要 |
Disclosed is a phase shift mask blank (11) that can prevent the occurrence of a loading effect. The phase shift mask blank (11) includes a phase shift film (5) containing silicon, a light-shielding film (2) made of a material resistant to etching of the phase shift film (5), and an etching mask film (3) made of an inorganic material resistant to etching of the light-shielding film (2), which are formed in this order on a substrate (1) transparent to exposure light. Assuming that the thickness of the phase shift film (5) is t1, the etching rate of the phase shift film (5) by dry etching with an etchant using the etching mask film (3) and the light-shielding film (2) as a mask is v1, the thickness of the etching mask film (3) is t2, and the etching rate of the etching mask film (3) by dry etching with the above etchant is v2, (t1/v1)<=(t2/v2) is satisfied.
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