| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device used in a digital camera, a digital video camera, a copying apparatus, and a facsimile apparatus to reduce a difference of dark current in each photoelectric converting element when a layout of gates of MOS transistors adjacent to each photoelectric converting element becomes asymmetrical, and to provide a camera using the same. <P>SOLUTION: The solid-state imaging device includes a first reflection preventing film 130a arranged on the light receiving surface of a first photoelectric converting element and a second reflection preventing film 130b arranged on the light receiving surface of a second photoelectric converting element and is characterized in that the total length of the part facing the first photoelectric converting element among the gate wires adjacent to the first photoelectric converting element is shorter than that of the part facing the second photoelectric converting element among the gate wires adjacent to the second photoelectric converting element and the area of the first reflection preventing film 130a is larger than that of the second reflection preventing film 130b. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
