| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of detecting and evaluating minute crystal defects containing silicon oxide and existing in a semiconductor substrate or the like. Ž<P>SOLUTION: A surface portion, including a major surface, of a semiconductor monocrystalline substrate is anisotropically etched so as to expose etching residues resulting from crystal defects existing in the semiconductor monocrystalline substrate, and crystal defects are evaluated on the basis of the etching residues. In the method, the anisotropic etching is performed on condition that a crystal defect non-formation region having no crystal defects containing silicon oxide, in the surface portion is etched, and reaction products generated by the etching are deposited in a crystal defect formation region having silicon oxide in the surface portion so that the crystal defect formation region is not etched. Crystal defects containing silicon oxide are evaluated on the basis of resultant defect-highlighting protrusions, each of which includes a crystal defect containing silicon oxide. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
