| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production method of surface-emitting semiconductor laser for correctly finding out the PL spectrum of an active layer of the surface-emitting semiconductor laser. Ž<P>SOLUTION: The includes a step of forming a laminate structure, containing a first DBR 13 on a substrate 25, an active layer 15 on the first DBR 13, and a first semiconductor spacer layer 17 on the active layer 15; a step of subjecting the laminate structure to heat treatment; a step of measuring photoluminescence (PL) wavelength of the active layer 15 and determining whether a wavelength, at which the PL intensity becomes a peak, is contained in a predetermined range of wavelength; a step of forming a tunnel junction region 35, which is used for constricting a current caused to flow to the active layer 15, and a second semiconductor spacer layer 19 on the first semiconductor spacer layer 17, when the wavelength, at which the PL intensity of the active layer 15 becomes a peak, is contained in the predetermined range of wavelength; and a step of forming a second DBR 23 on the second semiconductor spacer layer 19. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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