| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrostatic protective circuit which can prevent thermal damages due to surge voltage, without having to add new manufacturing steps. Ž<P>SOLUTION: A second drain region 23B is provided between a gate electrode 26 and a drain electrode 29 and is provided in contact with a first drain region 23A and a third drain region 23C between the first drain region 23A and the third 23C. The second drain region 23B has the same impurity concentration and diffusion depth of a conductive type as that of a channel stop region 31 (see Fig. 3) of a p-channel MOS transistor formed on a semiconductor substrate 10. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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