发明名称 |
A PROCESS FOR SHRINKING DIMENSIONS BETWEEN PHOTORESIST PATTERN COMPRISING A PATTERN HARDENING STEP |
摘要 |
<p>A process for forming a photoresist pattern on a device, comprising; a) forming a layer of first photoresist on a substrate from a first photoresist composition; b) imagewise exposing the first photoresist; c) developing the first photoresist to form a first photoresist pattern; d) treating the first photoresist pattern with a hardening compound comprising at least 2 amino (NH2) groups, thereby forming a hardened first photoresist pattern; e) forming a second photoresist layer on the region of the substrate including the hardened first photoresist pattern from a second photoresist composition; f) flood exposing the second photoresist; and, g) developing the flood exposed second photoresist to form a photoresist pattern with increased dimensions and reduced spaces.</p> |
申请公布号 |
WO2009122276(A1) |
申请公布日期 |
2009.10.08 |
申请号 |
WO2009IB05172 |
申请日期 |
2009.03.30 |
申请人 |
AZ ELECTRONIC MATERIALS USA CORP. |
发明人 |
ABDALLAH, DAVID, J.;DAMMEL, RALPH, R.;MONREAL, VICTOR |
分类号 |
G03F7/40;G03F7/00 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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