| 摘要 |
PURPOSE: A group III nitride based semiconductor light emitting diode including an ohmic contact light extraction structure layer is provided to reduce a loss of a light generated in a nitride based active layer. CONSTITUTION: A group III nitride based semiconductor light emitting diode includes a light emitting structure, an ohmic contact light extraction structure layer, and two electrode pads(60,70). The light emitting structure comprises a bottom nitride based clad layer(20), a nitride based active layer, and a top nitride based clad layer(40). The bottom nitride based clad layer is an n-type nitride based semiconductor layer including a buffer layer. The top nitride based clad layer is a p-type nitride based semiconductor layer. The ohmic contact light extraction structure layer is formed on a top part of the light emitting structure, and has a surface texture structure. |
