发明名称 POWER SEMICONDUCTOR APPARATUS
摘要 PROBLEM TO BE SOLVED: To reduce a total capacity of power semiconductor apparatus equipped with a cooling section. SOLUTION: A power semiconductor apparatus comprises a power semiconductor device 43, a plurality of power semiconductor modules 13 having a heat-conducting module substrate 41 for transferring the heat generated by the semiconductor device 43 to outside, a heat transfer plate 15 which is fixed in such a manner that it is in contact with the module substrate 41 of the semiconductor module 13, and a heat diffusion plate 16 which diffuses heat from a heat diffusion plane 24 and in which the heat transfer plate 15 is erected on a mounting plane 18 facing against the heat diffusion plane 24 so that heat can be transferred thereto. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009231672(A) 申请公布日期 2009.10.08
申请号 JP20080077255 申请日期 2008.03.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 SANO KO;KASHIBA YOSHIHIRO;ARAI NORIYOSHI
分类号 H01L25/07;H01L23/473;H01L25/18 主分类号 H01L25/07
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