NITRIDE SEMICONDUCTOR CRYSTAL THIN FILM AND ITS DEPOSITION METHOD, SEMICONDUCTOR DEVICE, AND ITS FABRICATION PROCESS

摘要

PROBLEM TO BE SOLVED: To fabricate an element of high breakdown voltage using a nitride semiconductor even when a silicon substrate is used. SOLUTION: A semiconductor device comprises a silicon substrate 101, a buffer layer 102 consisting of an AlN crystal grown epitaxially on the silicon substrate 101, a channel layer 103 consisting of GaN formed epitaxially on the buffer layer 102, and a carrier supply layer 104 consisting of Al0.25Ga0.75N formed epitaxially on the channel layer 103. The buffer layer 102 consists of a crystal of aluminum nitride (AlN) to which oxygen is added. COPYRIGHT: (C)2010,JPO&INPIT