发明名称 |
NON-VOLATILE MEMORY DEVICES HAVING A MULTI-LAYERED CHARGE STORAGE LAYER |
摘要 |
A non-volatile memory device includes a substrate having a first region and a second region. A first gate electrode is disposed on the first region. A multi-layered charge storage layer is interposed between the first gate electrode and the substrate, the multi-layered charge storage including a tunnel insulation, a trap insulation, and a blocking insulation layer which are sequentially stacked. A second gate electrode is placed on the substrate of the second region, the second gate electrode including a lower gate and an upper gate connected to a region of an upper surface of the lower gate. A gate insulation layer is interposed between the second gate electrode and the substrate. The first gate electrode and the upper gate of the second gate electrode comprise a same material.
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申请公布号 |
US2009250747(A1) |
申请公布日期 |
2009.10.08 |
申请号 |
US20090422862 |
申请日期 |
2009.04.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-HYUN;PARK KYU-CHARN |
分类号 |
H01L29/792;G11C7/00;H01L21/8246;H01L21/8247;H01L27/105;H01L27/115;H01L29/788 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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地址 |
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