| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film of AlN which is flat and thin, and a process for producing the thin film of AlN. SOLUTION: An AlN thin film 2 contains not less than 0.001% by weight and not more than 10% by weight of one or more additive elements selected from group III elements, group IV elements, and group V elements. The AlN thin film 2 can be formed on a base material 1 using plasma generated by setting an AlN sintered compact containing not less than 0.001% by weight and not more than 10% by weight of one or more additive elements selected from group III elements, group IV elements, and group V elements in a vacuum chamber and irradiating the AlN sintered compact with laser beam in such a state that the base material 1 has been set in the vacuum chamber. COPYRIGHT: (C)2010,JPO&INPIT |
