发明名称 FIELD EFFECT TRANSISTOR USING CARBON NANOTUBE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To improve the current density of a field effect transistor whose channel is a carbon nanotube, and to reduce a gate off current. SOLUTION: A catalyst film or a catalyst fine particle is formed on a substrate under the channel, the carbon nanotube is grown from a substrate surface under the channel using the catalyst film or the catalyst particle, the carbon nanotube is chained, a source and a drain are bridged, and a semiconductor conductive carbon nanotube is made to be present in each of many bridge routes practically. By the structure, the probability of configuring all the bridge routes by a metal conductive carbon nanotube is reduced. As a result, the gate-off current is reduced. Also, since the carbon nanotube is grown from the substrate and chained in a longitudinal direction, the density of the carbon nanotube is increased. As a result, an on-current is increased. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009231631(A) 申请公布日期 2009.10.08
申请号 JP20080076673 申请日期 2008.03.24
申请人 UNIV NAGOYA 发明人 KISHIMOTO SHIGERU;MIZUTANI TAKASHI;ONO TAKETAKA
分类号 H01L29/786;H01L21/336 主分类号 H01L29/786
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