| 摘要 |
Provided is a phase change memory device. The phase change memory device includes a first electrode and a second electrode. A phase change material pattern is interposed between the first and second electrodes. A phase change auxiliary pattern is in contact with at least one side of the phase change material pattern. The phase change auxiliary pattern includes a compound having a chemical formula expressed as DaMb[GxTy]c(0<=a/(a+b+c)<=0.2, 0<=b/(a+b+c)<=0.1, 0.3<=x/(x+y)<=0.7), where D comprises: at least one of C, N, and O; M comprises at least one of a transition metal, Al, Ga, and In; G comprises Ge; and T comprises Te.
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