发明名称 |
Device Structures with a Hyper-Abrupt P-N Junction, Methods of Forming a Hyper-Abrupt P-N Junction, and Design Structures for an Integrated Circuit |
摘要 |
Device structures with hyper-abrupt p-n junctions, methods of forming hyper-abrupt p-n junctions, and design structures for an integrated circuit containing devices structures with hyper-abrupt p-n junctions. The hyper-abrupt p-n junction is defined in a SOI substrate by implanting a portion of a device layer to have one conductivity type and then implanting a portion of this doped region to have an opposite conductivity type. The counterdoping defines the hyper-abrupt p-n junction. A gate structure carried on a top surface of the device layer operates as a hard mask during the ion implantations to assist in defining a lateral boundary for the hyper-abrupt-n junction.
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申请公布号 |
US2009250739(A1) |
申请公布日期 |
2009.10.08 |
申请号 |
US20080099316 |
申请日期 |
2008.04.08 |
申请人 |
JOHNSON JEFFREY B;JOSEPH ALVIN J;RASSEL ROBERT M;SHI YUN |
发明人 |
JOHNSON JEFFREY B.;JOSEPH ALVIN J.;RASSEL ROBERT M.;SHI YUN |
分类号 |
H01L29/93;H01L21/329 |
主分类号 |
H01L29/93 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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