Photovoltaische Anordnung mit kugelförmigen Halbleiterpartikeln

摘要

A photoelectric conversion element (2) is disposed in each of a plurality of recesses (17) of a support (3). Light reflected by the inside surface of the recess (17) shines on the photoelectric conversion element (2). The photoelectric conversion element (2) has an approximately spherical shape and has the following structure. The outer surface of a center-side n-typeamorphous silicon (a-Si) layer (7) is covered with a p-type amorphous SiC (a-SiC) layer (8) having a wider optical band gap than a-Si does, whereby a pn junction is formed. A first conductor (13) of the support (3) is connected to the p-type a-SiC layer (8) of the photoelectric conversion element (2) at the bottom or its neighborhood of the recess (17). A second conductor (14), which is insulated from the first conductor (13) by an insulator (15), of the support (3) is connected to the n-type a-Si layer (7) of the photoelectric conversion element (2).