SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A recess along a sidewall is formed in a pMOS region (1p) and an nMOS region (1n). An SiC layer (22c) the thickness of which is larger than the depth of the recess is formed in the recess. Then, a sidewall (52) covering a portion of the SiC layer (22c) is formed on both sides of a gate electrode (14) in the pMOS region (1p). Then, a recess (23) the side surface in a gate insulating film (13) side of which is formed to be inclined so that the higher portion of the side surface is closer to the gate insulating film (13) in a horizontal direction in a region below the surface of a silicon substrate (11) is formed by selectively removing the SiC layer (22c) in the pMOS region (1p). An SiGe layer (24) is formed in the recess (23) in the pMOS region (1p).