| 摘要 |
<p>Disclosed is a plasma etching method that utilizes a processing gas under plasma conditions, wherein the plasma etching method is such that the aforementioned processing gas comprises a saturated fluorinated hydrocarbon represented by Formula (1): CxHyFz (In the formula, x represents 3, 4, or 5, y and z independently represent positive integers; and y > z). Provided is a plasma etching method with which, by utilizing a specific processing gas comprising a specific fluorinated hydrocarbon under plasma conditions to etch a silicon nitride film formed to cover a silicon oxide film formed on a processed body, selectivity of the silicon nitride film with respect to the silicon oxide film can be improved.</p> |
