| 摘要 |
PURPOSE: A semiconductor memory device is provided to reduce an occupied dimension of a memory cell by controlling a voltage supplied to a source, a drain, and a gate of an FBC(Floating Body Cell) transistor according to an operation mode. CONSTITUTION: A semiconductor memory device includes a memory cell block(19), a word line driver(12), a source line driver(13), and a bit line driver(16). The memory cell block includes a gate connected to a word line, a drain and a source connected to a bit line and a source line. The memory cell block includes a plurality of FBC transistors which form a transistor pair by sharing the source line. The word line driver supplies a voltage to the word line according to an operation mode. The source line driver supplies a voltage to the source line according to the operation mode. The bit line driver supplies a voltage to the bit line according to the operation mode.
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