发明名称 SIMULATION MODEL PREPARING METHOD, MASK DATA PREPARING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a simulation model preparing method capable of removing efficiently an abnormal value from a dimension measured data, and capable of carrying out a highly precise model base OPC. <P>SOLUTION: A simulation model is prepared by changing an exposure value and a focusing value to form a resist pattern, by measuring a line width of the resist pattern, by calculating an allowance fluctuation range of a pattern line width, based on a dispersion of the exposure values and a dispersion of the focusing values, by calculating a difference value between an approximate value on a function of a fitting function using the exposure value and the focusing value as parameters, and a calculation result hereinbefore, by comparing the difference value with the allowance fluctuation range, by deleting the measured value with the difference value getting larger than the allowance fluctuation range, to calculate again the fitting function, and by deleting the measured value outside the allowance fluctuation range of the pattern line width of a mask. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009229479(A) 申请公布日期 2009.10.08
申请号 JP20080070900 申请日期 2008.03.19
申请人 TOSHIBA CORP 发明人 SANHONGI SHOJI;ASANO MASASHI
分类号 G03F1/36;G03F1/68;G03F1/70;H01L21/027 主分类号 G03F1/36
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