| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor apparatus capable of supplying a large current to a phase change part without increasing the area of unit cells in a memory. Ž<P>SOLUTION: In the semiconductor apparatus, the source and drain of a MOS transistor MT for driving are connected to the base of a bipolar transistor BT. Then, one end of the phase change memory PCM to be expressed as variable resistance is connected to the emitter of the bipolar transistor BT and the other end is connected to a bit line BL. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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