| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in on/off characteristics, and to provide its manufacturing method. SOLUTION: The method of manufacturing the semiconductor device includes: (a) a step of forming a gate electrode 2 and a gate insulating film 3 on a glass substrate 1 in an order; (b) a step of forming semiconductor layers 4 and 5 on the gate insulating film 3 after the process (a); (c) a step of forming source/drain electrodes 6 separately across a channel on the semiconductor layer 5 after the process (b); (d) a step of forming a protective film 9 on the source/drain electrodes 6 and an n-type semiconductor layer 5 after the process (c); and (e) a step of executing heat treatment after the process (d). The dehydrogenation temperature of the gate insulating film 3 is higher than that of the protective film 9, and a heat treatment temperature in the process (e) is between the dehydrogenation temperature of the gate insulating film 3 and the dehydrogenation temperature of the protective film 9. COPYRIGHT: (C)2010,JPO&INPIT
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