发明名称 SUBSTRATE FILM FOR MULTILAYER BACK GRINDING, BACK GRINDING FILM, AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a substrate film for monolayer or multilayer back grinding that prevents a semiconductor wafer from being warped easily even if the substrate film is stuck to the semiconductor wafer in the back grinding process of the thin-type semiconductor wafer and has excellent dimensional stability, and to provide a back grinding film. SOLUTION: In the substrate film for multilayer back grinding, layers A, B, C are laminated in this order. The layer A contains a resin composition made of 0-70 wt.% of amorphous olefin and 30-100 wt.% of polypropylene-based resin. The layer B contains a resin composition made of 15-100 wt.% of amorphous olefin and 0-85 wt.% of polypropylene-based resin. The layer C contains a thermoplastic resin having rubber elasticity. The present invention relates to the substrate film for multilayer back grinding and the method of manufacturing the substrate film. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009231758(A) 申请公布日期 2009.10.08
申请号 JP20080078459 申请日期 2008.03.25
申请人 GUNZE LTD 发明人 OKAGAWA MASAAKI;SAGO SHIGERU;SAITO RYUTA
分类号 H01L21/304 主分类号 H01L21/304
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