| 摘要 |
A memory includes a memory cell, a sensing amplifier, four N-type MOS transistors, a reference circuit, and a comparator. The sensing amplifier is used for sensing digital data stored in the memory cell of the memory and generating an output signal corresponding to the digital data when the memory cell is read. The sensing amplifier includes a current source, a voltage generator, an auxiliary transistor, and an operational amplifier. The auxiliary transistor is coupled in parallel to the current source so as to provide an additional current to the sensing amplifier initially. Thus, the sensing amplifier can output a stable signal in a short time so as to improve the performance of the memory.
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