METHOD OF FORMING A SEMICONDUCTOR DEVICE USING STRESS MEMORIZATION

摘要

A stress memorization technique (SMT) film (44) is deposited over a semiconductor device (14). The SMT film is annealed with a low thermal budget anneal that is sufficient to create and transfer the stress of the SMT film to the semiconductor device. The SMT film is then removed. After the SMT film is removed, a second anneal is applied to the semiconductor device sufficiently long and at a sufficiently high temperature to activate dopants implanted for forming device source/drains (28, 30). The result of this approach is that there is minimal gate dielectric (22) growth in the channel along the border of the channel.